为实现InP基单片集成光电子器件和系统,对InGaAsP/InGaAsP分别限制异质结多量子阱激光器结构展开量子阱混杂(QWI)技术研究。在不同能量P离子注入、不同快速热退火(RTA)条件以及循环退火下,研究了有源区量子阱混杂技术,实验结果采用光致发光(PL)谱进行表征。实验结果表明:在不同变量下皆可获得量子阱混杂效果,其中退火温度影响最为显著,且循环退火可进一步提高量子阱混杂效果;PL谱蓝移随着退火温度、退火时间和注入能量的增大而增大,退火温度对蓝移的影响最大,在注入剂量为1×10 14 ion/cm 2,注入能量为600 keV,750 ℃二次退火150 s时获得最大蓝移量116 nm。研究结果为未来基于QWI技术设计和制备单片集成光电子器件和系统奠定了基础。

Hyperlenses based on metamaterials can be applied to subwavelength imaging in the lightwave band. In this letter, we demonstrate both through simulations and experimentally verified results that our proposed half-cylindrical shaped hyperlens can be used for super-resolution microwave focusing in a TE mode. Based on split ring resonators, the hyperlens satisfies a hyperbolic dispersion relationship. Simulations demonstrate that the focused spot size and position are insensitive to the rotation angle of the hyperlens around its geometric center. Experimental results show that a focused spot size 1/3 of the vacuum wavelength is achieved in the microwave band.

基于严格耦合波理论，从反射率、吸收增强因子、光生载流子几率和理想光电转换效率几个方面模拟分析了不同锥型亚波长光栅对1 μm厚晶硅电池产生的影响。模拟结果得出：在相同光栅高度下，虽然小周期（P=100 nm）锥形亚波长光栅的表面反射率低于大周期（P=500 nm）结构的表面反射率，但是大周期锥形亚波长光栅薄膜晶硅电池的光生载流子几率和理想光电转换效率高于小周期结构的相应值，且这种区别随着光栅高度增加而增加。在AM1.5D太阳光谱下，最优化的大周期光栅使得薄膜晶硅电池光生载流子几率和理想效率增加1.4倍和1.65倍，而最优化的小周期光栅只能分别增加0.54倍和0.48倍。

To resolve the problem of missed evanescent waves in a beam focusing system, a hyperlens-based beam focusing device is proposed in this letter. This device can convert the evanescent waves into propagating waves, and then a super-resolution spot is formed at the center of the hyperlens. The working principle of the device is presented, and the way in which the material and structural parameters of the hyperlens affect the resolution and transmission is analyzed in detail. A multibeam focusing device is optimally designed, and the simulated results verify that a nanoscale spot with a diameter of 15.6 nm (corresponding to \lambda 0/24, where \lambda 0 is the working wavelength in vacuum) is achieved, which is far less than the diffraction limited resolution with a value of 625 nm (1.7\lambda 0). The device is expected to find numerous applications in optical data storage and nano{photolithography, among others.

A kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-III trimethyl-gallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200 mA, the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW, respectively.